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CMOS LDO Regulator Series for Portable Equipments
High-ripple rejection CMOS LDO Regulators for High-frequency Circuits
BHNB1WHFV Series
No.09020EAT04
Description The BHNB1WHFV series is a line of 150 mA output, high-performance CMOS regulators that deliver a high ripple rejection ratio of 80 dB (Typ., 1 kHz). They are ideal for use in high-performance, analog applications and offer improved line regulation, load regulation, and noise characteristics. Using the ultra-small HVSOF5 package, which features a built-in heat sink, contributes to space-saving application designs.
Features 1) High accuracy output voltage: 1% 2) High ripple rejection ratio: 80 dB (Typ., 1 kHz) 3) Stable with ceramic capacitors 4) Low bias current: 60 A 5) Output voltage on/off control 6) Built-in overcurrent and thermal shutdown circuits 7) Ultra-small HVSOF5 power package
Applications Battery-driven portable devices, etc.
Product line 150 mA BHNB1WHFV Series Product name 2.5 2.8 2.85 BHNB1WHFV
2.9
3.0
3.1
3.3
Package HVSOF5

Model name: BHNB1W a b Symbol a 25 28 2J 29 b Description Output voltage specification Output voltage (V) 2.5 V (Typ.) 2.8 V (Typ.) 2.85 V (Typ.) 2.9 V (Typ.) Package HFV: HVSOF5 30 31 33 Output voltage (V) 3.0 V (Typ.) 3.1 V (Typ.) 3.3 V (Typ.)
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2009.04 - Rev.A
BHNB1WHFV Series
Absolute maximum ratings Parameter Applied power supply voltage Power dissipation Operating temperature range Storage temperature range Symbol VMAX Pd Topr Tstg Limit -0.3 to +6.0 410 *1 -40 to +85 -55 to +125 Unit V mW C C
Technical Note
*1: Reduce by 4.1 mW/C over 25C, when mounted on a glass epoxy PCB (70 mm 70 mm 1.6 mm).
Recommended operating ranges (not to exceed Pd) Parameter Symbol Power supply voltage Output current VIN IOUT
Limit 2.5 to 5.5 0 to 150
Unit V mA
Recommended operating conditions Parameter Symbol Min. Input capacitor Output capacitor
*2
Typ. -- --
Max. -- --
Unit F F
Conditions The use of ceramic capacitors is recommended. The use of ceramic capacitors is recommended.
CIN CO
0.1
*2
2.2 *2
Make sure that the output capacitor value is not kept lower than this specified level across a variety of temperature, DC bias characteristic. And also make sure that the capacitor value cannot change as time progresses.
Electrical characteristics (Unless otherwise specified, Ta = 25C, VIN = VOUT + 1.0 V, STBY = 1.5 V, CIN = 0.1 F, CO = 2.2 F) Parameter Symbol Min. Typ. Max. Unit Conditions Output voltage Circuit current Circuit current (STBY) Ripple rejection ratio Load response 1 Load response 2 Dropout voltage 1 Dropout voltage 2 Line regulation Load regulation 1 Load regulation 2 Overcurrent protection limit current Short current STBY pull-down resistance STBY control voltage ON OFF VOUT IGND ISTBY RR LTV1 LTV2 VSAT1 VSAT2 VDL1 VDLO1 VDLO2 ILMAX ISHORT RSTB VSTBH VSTBL VOUT 0.99 -- -- -- -- -- -- -- -- -- -- -- -- 275 1.5 -0.3 VOUT 60 -- 80 25 25 80 250 1 6 9 250 50 550 -- -- VOUT 1.01 100 1.0 -- -- -- 150 450 20 30 90 -- -- 1100 VIN 0.3 V A A dB mV mV mV mV mV mV mV mA mA k V V IOUT = 1 mA IOUT = 50 mA STBY = 0 V VRR = -20 dBv, fRR = 1 kz, IOUT = 10 mA IOUT = 1 mA to 30 mA IOUT = 30 mA to 1 mA VIN = 0.98 VOUT, IOUT = 30 mA VIN = 0.98 VOUT, IOUT = 100 mA VIN = VOUT + 0.5 V to 5.5 V, IOUT = 50 mA IOUT = 1 mA to 100 mA IOUT = 1 mA to 150 mA VO = VOUT 0.98 VO = 0 V
* This IC is not designed to be radiation-resistant.
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2009.04 - Rev.A
BHNB1WHFV Series
Reference data
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0
Technical Note
4.0 3.5
4.0 3.5 Output Volt age VOUT [V] 3.0 2.5 2.0 1.5 1.0 0.5 0.0
0 1 2 3 4 5
Output Volt age VOUT [ V]
Output Voltage VOUT[V]
3.0 2.5 2.0 1.5 1.0 0.5 0.0
0
1
Input Voltage VIN[V]
2
3
4
5
Input Voltage VIN[V]
0
1
2 3 4 Input Voltage VIN[V]
5
Fig. 1 Output Voltage vs Input Voltage (BH25NB1WHFV)
80 70 60 50 40 30 20 10 0 0 1
Fig. 2 Output Voltage vs Input Voltage (BH30NB1WHFV)
80 70
Fig. 3 Output Voltage vs Input Voltage (BH33NB1WHFV)
80 70
GND Current IGND[A]
GND Current IGND[A]
GND Current IGND[ A]
60 50 40 30 20 10 0
60 50 40 30 20 10 0
Input Voltage VIN[V]
2
3
4
5
0
1
Input Voltage VIN[V]
2
3
4
5
0
1
Input Voltage VIN[V]
2
3
4
5
Fig. 4 GND Current vs Input Voltage (BH25NB1WHFV)
3.5 3.0 Out put Voltage VOUT [V] Out put Voltage VOUT[V] 2.5 2.0 1.5 1.0 0.5 0.0 0 50 100 150 200 250 Out put Current IOUT[mA] 300
Fig. 5 GND Current vs Input Voltage (BH30NB1WHFV)
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 50 100 150 200 250 300
Fig. 6 GND Current vs Input Voltage (BH33NB1WHFV)
3.5 3.0
Out put Voltage VOUT[V]
2.5 2.0 1.5 1.0 0.5 0.0
Output Current IOUT[ mA]
0
50
100
150
200
250
300
Output Current IOUT[mA]
Fig. 7 Output Voltage vs Output Current (BH25NB1WHFV)
0.5
Fig. 8 Output Voltage vs Output Current (BH30NB1WHFV)
0.5
Fig. 9 Output Voltage vs Output Current (BH33NB1WHFV)
0.5
VSAT [V]
Dropout Voltage VSAT [ V]
0.2
Dropout Voltage
0.3
0.3
Dropout Voltage VSAT [ V]
0 50 100 150
0.4
0.4
0.4
0.3
0.2
0.2
0.1
0.1
0.1
0.0 0
0.0
0.0
Output Current IOUT[mA]
50
100
150
Output Current IOUT[ mA]
0
50
100
150
Output Current IOUT[ mA]
Fig. 10 Dropout voltage vs Output Current Fig. 11 Dropout voltage vs Output Current Fig. 12 Dropout voltage vs Output Current (BH33NB1WHFV) (BH30NB1WHFV) (BH25NB1WHFV)
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2009.04 - Rev.A
BHNB1WHFV Series
2.60 3.10 3.40
Technical Note
Out put Volt age VOUT[ V]
Out put Volt age VOUT[ V]
2.55
3.05
Out put Volt age VOUT[ V]
3.35
2.50
3.00
3.30
2.45
2.95
3.25
IOUT=1mA
2.40 -50 -25 0 2.90 25 50 75 100 -50 -25 0 25
IOUT=1mA
3.20 50 75 100 -50 -25 0 25
IOUT=1mA
50 75 100
T emp[]
T emp[]
T emp[]
Fig. 13 Output Voltage vs Temperature (BH25NB1WHFV)
90 80
Fig. 14 Output Voltage vs Temperature (BH30NB1WHFV)
90 80
Fig. 15 Output Voltage vs Temperature (BH33NB1WHFV)
90 80
Ripple Rejection R.R.[dB]
Ripple Rejection R.R.[dB]
70 60 50 40 30 20 10
70 60 50 40 30 20 10
Ripple Rejection R.R.[dB]
70 60 50 40 30 20 10
Co=2.2F Io=10mA
100 1k 10 k 100 k 1M
Co=2.2F Io=10mA
100 1k 10 k 100 k 1M
Co=2.2F Io=10mA
100 1k 10 k 100 k 1M
Frequency f[Hz]
Frequency f[Hz]
Frequency f[Hz]
Fig. 16 Ripple Rejection (BH25NB1WHFV)
Fig. 17 Ripple Rejection (BH30NB1WHFV)
Fig. 18 Ripple Rejection (BH33NB1WHFV)
IOUT = 1 mA 30 mA
IOUT = 1 mA 30 mA
IOUT = 1 mA 30 mA
VOUT
50 mV / div
VOUT
50 mV / div
VOUT
50 mV / div
100 s / div 100 s / div 100 s / div
Fig. 19 Load Response (Co = 2.2 F) (BH25NB1WHFV)
Fig. 20 Load Response (Co = 2.2 F) (BH30NB1WHFV)
Fig. 21 Load Response (Co = 2.2 F) (BH33NB1WHFV)
1 V / div STBY STBY
1 V / div STBY
1 V / div
1 V / div Co = 1 F Co = 10 F VOUT Co = 2.2 F 100 s / div VOUT Co = 1 F
1 V / div Co = 10 F Co = 2.2 F 100 s / div Co = 1 F
1 V / div
Co = 10 F Co = 2.2 F 100 s / div
VOUT
Fig. 22 Output Voltage Rise Time (BH25NB1WHFV)
Fig. 23 Output Voltage Rise Time (BH30NB1WHFV)
Fig. 24 Output Voltage Rise Time (BH33NB1WHFV)
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2009.04 - Rev.A
BHNB1WHFV Series
Block diagram, recommended circuit diagram, and pin assignment diagram BHNB1WHFV
VIN VIN 3
VOLTAGE REFERENCE
Technical Note
Pin No.
VOUT VOUT
Symbol STBY GND VIN VOUT N.C.
Function Output voltage on/off control (High: ON, Low: OFF) Ground Power supply input Voltage output NO CONNECT
Cin 2
1 2 3 4 5
4 GND
THERMAL PROTECTION
OVER CURRENT PROTECTION
Co N.C. 5
VSTB
STBY
1
CONTROL BLOCK
Cin 0.1F Co 2.2F
Fig. 25 Power dissipation (Pd) 1. Power dissipation (Pd) Power dissipation calculations include estimates of power dissipation characteristics and internal IC power consumption, and should be treated as guidelines. In the event that the IC is used in an environment where this power dissipation is exceeded, the attendant rise in the junction temperature will trigger the thermal shutdown circuit, reducing the current capacity and otherwise degrading the IC's design performance. Allow for sufficient margins so that this power dissipation is not exceeded during IC operation. Calculating the maximum internal IC power consumption (PMAX) PMAX = (VIN - VOUT) IOUT (MAX.) VIN : Input voltage VOUT : Output voltage IOUT (MAX): Max. output current 2. Power dissipation/power dissipation reduction (Pd) HVSOF5
0.6
Board: 70 mm 70 mm 1.6 mm Material: Glass epoxy PCB
0.4
410 mW
Pd[W]
0.2 0
0 25 50 75 100 125
Ta[]
Fig. 26
HVSOF5 Power Dissipation/Power Dissipation Reduction (Example)
*Circuit design should allow a sufficient margin for the temperature range so that PMAX < Pd.
Input Output capacitors It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as possible. These capacitors will be used when the power supply impedance increases or when long wiring paths are used, so they should be checked once the IC has been mounted. Ceramic capacitors generally have temperature and DC bias characteristics. When selecting ceramic capacitors, use X5R or X7R, or better models that offer good temperature and DC bias characteristics and high tolerant voltages. Typical ceramic capacitor characteristics
120
100
Capac itance rate of change [% ]
100
Capacitance rate of change [%]
Capacitanc e rate of change [%]
50 V tolerance
50 V tolerance
120
95
100 80
80
90 85 80 75
X7R X5R Y5V
60
40
10 V tolerance 16 V tolerance
10 V tolerance
60 40
16 V tolerance
20
20 0
0
0 1
70
DC bias Vdc[V]
2
3
4
0
1
DC bias Vdc[V]
2
3
4
- 25
0
25 Temp[]
50
75
Fig. 27 Capacitance vs Bias (Y5V)
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Fig. 28 Capacitance vs Bias (X5R, X7R)
Fig. 29 Capacitance vs Temperature (X5R, X7R, Y5V)
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BHNB1WHFV Series
Technical Note
Output capacitors Mounting input capacitor between input pin and GND(as close to pin as possible), and also output capacitor between output pin and GND(as close to pin as possible) is recommended. The input capacitor reduces the output impedance of the voltage supply source connected to the VCC. The higher value the output capacitor goes, the more stable the whole operation becomes. This leads to high load transient response. Please confirm the whole operation on actual application board. Generally, ceramic capacitor has wide range of tolerance, temperature coefficient, and DC bias characteristic. And also its value goes lower as time progresses. Please choose ceramic capacitors after obtaining more detailed data by asking capacitor makers.
100
BHNB1WHFV
COUT = 2.2 F Ta = +25C
10
ESR[ ]
1
Stable region
0.1
0.01 0 50 100 150
Output Current IOUT [mA]
Fig. 30 Stable Operation Region (Example) Operation Notes 1. Absolute maximum ratings An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses. 2. Thermal design Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions. Inter-pin shorts and mounting errors Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any connection error or if pins are shorted together. Thermal shutdown circuit (TSD) The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is assumed. Overcurrent protection circuit The IC incorporates a built-in overcurrent protection circuit that operates according to the output current capacity. This circuit serves to protect the IC from damage when the load is shorted. The protection circuit is designed to limit current flow by not latching in the event of a large and instantaneous current flow originating from a large capacitor or other component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents. However, the IC should not be used in applications characterized by the continuous operation or transitioning of the protection circuits. At the time of thermal designing, keep in mind that the current capability has negative characteristics to temperatures. Action in strong electromagnetic field Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction. Ground wiring pattern When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns, placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the GND wiring pattern of any external components, either.
3.
4.
5.
6.
7.
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2009.04 - Rev.A
BHNB1WHFV Series
8. GND voltage The potential of GND pin must be minimum potential in all operating conditions.
Technical Note
9.
Back Current In applications where the IC may be exposed to back current flow, it is recommended to create a path to dissipate this current by inserting a bypass diode between the VIN and VOUT pins.
Back current
VIN
OUT
STBY
GND
Fig. 31 Example Bypass Diode Connection 10. Testing on application boards When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress. Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic measure. Use similar precaution when transporting or storing the IC. 11. Regarding input pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor. For example, the relation between each potential is as follows: When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used.
Resistor Pin A Pin A
P+ N P P+ N N
Transistor (NPN) Pin B
C B E B P P+ N C E
Pin B
N
Parasitic element
P+
N
P substrate
Parasitic element
GND
P substrate
Parasitic element
GND GND GND
Parasitic element
Other adjacent elements
Fig. 32 Example of IC structure
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2009.04 - Rev.A
BHNB1WHFV Series
Ordering part number
Technical Note
B
Part No.
H
3
0
N
B
1
W
Shutdown switch W : Includes switch
H
F
V
-
T
R
Output voltage
Series NB1 : High ripple rejection
Package HFV : HVSOF5
Packaging and forming specification TR: Embossed tape and reel
HVSOF5

1.60.05 (0.8)
0.2MAX
Tape Quantity Direction of feed
Embossed carrier tape 3000pcs TR
The direction is the 1pin of product is at the upper right when you hold
1.20.05 (MAX 1.28 include BURR)
1.00.05
(0.05)
(0.3)
1.60.05
5
4
4
5
(0.91)
(0.41)
( reel on the left hand and you pull out the tape on the right hand
1pin
)
123
321
0.130.05 S
0.6MAX
+0.03 0.02 -0.02
0.1 0.5 0.220.05
S 0.08
M
Direction of feed
(Unit : mm)
Reel
Order quantity needs to be multiple of the minimum quantity.
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2009.04 - Rev.A
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
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